- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,669
In-stock
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STMicroelectronics | MOSFET P-Ch 30 Volt 24 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 24 A | 32 mOhms | Enhancement | ||||||
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4,043
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 8 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 24 A | 50 mOhms | Enhancement | ||||||
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86
In-stock
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IXYS | MOSFET -24 Amps -200V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | - 5 V | 150 nC | Enhancement | ||||
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110
In-stock
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IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
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140
In-stock
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IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
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1,346
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 8 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 24 A | 41 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 200V 11 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | Enhancement |
