- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,537
In-stock
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Fairchild Semiconductor | MOSFET DISC BY MFG 2/02 | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.6 A | 125 mOhms | Enhancement | ||||||
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13,131
In-stock
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IR / Infineon | MOSFET MOSFT 100V 1.6A 200mOhm 17nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 17 nC | ||||||||
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13,473
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SSOT-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 1.6 A | 261 mOhms | 2.9 nC | PowerTrench | |||||||
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14,744
In-stock
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Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
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11,930
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 0.24 Ohms | 2.5 V | 3.4 nC | Enhancement | ||||
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GET PRICE |
99,510
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg | 16 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 100 V | 1.6 A | 235 mOhms | 2.5 nC | ||||||||
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6,476
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 60V 1.7A | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 98 mOhms | Enhancement | UltraFET | |||||
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4,590
In-stock
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Fairchild Semiconductor | MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.6 A | 299 mOhms | Enhancement | PowerTrench | |||||
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4,990
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 5.3 Ohms | Enhancement | ||||||
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7,829
In-stock
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Diodes Incorporated | MOSFET 0.35W 28V 1.6A | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 1.6 A | 88 mOhms | Enhancement | ||||||
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | ||||
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1,076
In-stock
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Diodes Incorporated | MOSFET 60V 1.6A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 1.6 A | 300 mOhms | Enhancement | ||||||
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1,243
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 2.5 V | 8.3 nC | Enhancement | ||||
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733
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 4.5 V | 8.8 nC | SuperFET II | |||||
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81,050
In-stock
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Fairchild Semiconductor | MOSFET 1000V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
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919
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 2.5 V | 6.8 nC | Enhancement | SuperFET II | |||
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1,420
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||||
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206
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | 23.7 nC | ||||||
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309
In-stock
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Diodes Incorporated | MOSFET 60V IntelliFET Over Current Ctrl | SMD/SMT | SOT-223-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 385 mOhms | 1 V | Enhancement | IntelliFET | |||||
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1,000
In-stock
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Diodes Incorporated | MOSFET 60V IntelliFET N-CHN W/STATUS PIN | SMD/SMT | SOT-223-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 385 mOhms | 1 V | Enhancement | IntelliFET | |||||
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484
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | ||||||
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525
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 92 mOhms | 1 V | 8.6 nC | Enhancement | ||||
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78
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | ||||||
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100
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | ||||||||||
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75
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | ||||||||||
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9,586
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 34 mOhms | 800 mV | 2.3 nC | Enhancement | NexFET | |||
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500
In-stock
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA | 10 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 14.6 mOhms | 700 mV | 7.8 nC | Enhancement | ||||
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495
In-stock
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA | DSBGA-4 | Reel | 1 Channel | Si | N-Channel | 1.6 A | |||||||||||||
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VIEW | onsemi | MOSFET NCH+SBD 4V DRIVE SERIES | SMD/SMT | SCH-6 | Reel | Si | N-Channel | 30 V | 1.6 A | 180 mOhms | |||||||||||
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39
In-stock
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IXYS | MOSFET 1.6 Amps 500 V 6 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 6.5 Ohms | 5.5 V | 3.9 nC | Enhancement | PolarHV |
