- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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254
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V/25V Pch Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.4 A | 67 mOhms | PowerTrench | |||||||
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2,868
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.4 A | 38 mOhms | 6.9 nC | ||||||
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7,505
In-stock
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onsemi | MOSFET -20V -4.4A P-Channel w/4.1A Schottky | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 64 mOhms | Enhancement | ||||||
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6,436
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 48 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
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2,470
In-stock
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Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.4 A | 115 mOhms | Enhancement | ||||||
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1,156
In-stock
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Diodes Incorporated | MOSFET Dl 30V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.4 A | 110 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Single P-ch 20V 4.4A | UFM-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 25.8 mOhms |
