- Manufacture :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,607
In-stock
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Diodes Incorporated | MOSFET P-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | Enhancement | |||||
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7,885
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | - 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | - 2.8 V | Enhancement | ||||
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8,325
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 200 mA | 5.5 Ohms | - 1.15 V | Enhancement | ||||
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9,600
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT MODE MOSFET | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | ||||
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6,804
In-stock
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Nexperia | MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.8 Ohms | 0.55 nC | |||||
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943
In-stock
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Diodes Incorporated | MOSFET P Channel | 40 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | Enhancement | |||||
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611
In-stock
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Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | |||||
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4,227
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | ||||
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1,466
In-stock
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Diodes Incorporated | MOSFET P-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | - 2 V | Enhancement | ||||
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1,655
In-stock
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Diodes Incorporated | MOSFET 200V 200mA P-Channel Enhancement MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | |||||
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5,945
In-stock
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onsemi | MOSFET PCH+PCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 200 mA | 10.4 Ohms | 1.43 nC | |||||
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1,999
In-stock
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Nexperia | MOSFET 30V 200 MA P-CH TRENCH MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 4.1 Ohms | 1.1 V | 0.72 nC | Enhancement | ||||
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3,350
In-stock
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Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | ||||
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3,746
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V | SMD/SMT | SOT-346-3 | Reel | Si | P-Channel | - 60 V | - 200 mA | 1.3 Ohms | - 3.5 V | |||||||||
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5,134
In-stock
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Toshiba | MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.4 Ohms | - 1.5 V | |||||
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9,905
In-stock
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Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | ||||
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VIEW | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | Enhancement |
