- Mounting Style :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,233
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | ||||||
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3,881
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 900 mA | 650 mOhms | Enhancement | |||||||
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165
In-stock
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IXYS | MOSFET 4500V 0.9A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 900 mA | 95 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | |||||
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15,668
In-stock
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Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement | |||||
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44,280
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Channel PowerTrench | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 164 mOhms | Enhancement | PowerTrench | ||||||
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2,668
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | 12 V | SMD/SMT | U-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | |||||
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7,148
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 370 mOhms | 770 mV | 0.77 nC | Enhancement | |||||
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2,134
In-stock
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Fairchild Semiconductor | MOSFET 600V 0.9A 12Ohm N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 900 mA | 11.5 Ohms | 2 V to 4 V | 4.8 nC | Enhancement | |||||
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13,840
In-stock
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Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd | 12 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | |||||
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5,040
In-stock
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Fairchild Semiconductor | MOSFET N-Ch 600V 0.9A 12Ohm | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 900 mA | 12 Ohms | |||||||||||
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VIEW | Nexperia | MOSFET N-Chan 30V 900mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 490 mOhms |