- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
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31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | CoolMOS | |||||
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1,172
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chnl Dual Cool Pwr Trench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 600 uOhms | 1.9 V | 147 nC | PowerTrench | ||||
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447
In-stock
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Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
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383
In-stock
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Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
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548
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | |||||||||||
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342
In-stock
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Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 79 mOhms | 4 V | 187 nC | SuperFET | ||||
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555
In-stock
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Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET, Fast recovery | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 75 mOhms | 190 nC | SuperFET | |||||
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371
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET SupreMOS | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 51.5 mOhms | SupreMOS | |||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 47A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 73 mOhms | Enhancement | SuperFET FRFET | |||||
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227
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 47 A | 70 mOhms | Enhancement | CoolMOS | |||||
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40
In-stock
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IXYS | MOSFET 47 Amps 600V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 40 mOhms | 3 V | 150 nC | Enhancement | CoolMOS | |||
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4,230
In-stock
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onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 9 mOhms | |||||||
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566
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | |||||
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523
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 10mOhm 65.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 18 mOhms | 65.3 nC | ||||||||
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1,023
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 22mOhm 32nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | ||||||||
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24
In-stock
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IXYS | MOSFET 47 Amps 600V 70 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 4 V | 255 nC | Enhancement | CoolMOS | |||
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1,193
In-stock
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onsemi | MOSFET NFET U8FL 30V 47A 7.4MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 5.9 mOhms | 1.3 V | 19.3 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET N-Channel Super Coolmos Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 45 mOhms | 3 V | 150 nC | Enhancement | CoolMOS, HiPerDyn | |||
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10
In-stock
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IXYS | MOSFET 47 Amps 600V | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 47 A | 45 mOhms | Enhancement | CoolMOS | |||||
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21
In-stock
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IXYS | MOSFET CoolMOS Power MOSFET w/ HiPerDyn FRED | Through Hole | ISOPLUS-i4-PAK-5 | Tube | Si | N-Channel | 600 V | 47 A | 45 mOhms | CoolMOS | ||||||||||
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35
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | D3PAK-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 47 A | 70 mOhms | 3 V | 260 nC | Enhancement | |||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 47 A | 210 mOhms | 4 V | 305 nC | Enhancement | ||||||
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16
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 47 A | 70 mOhms | 2.1 V | 250 nC | Enhancement | |||||||
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1,400
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 3 V | 260 nC | Enhancement | |||||
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955
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 33 mOhms | Enhancement | SIPMOS | |||||
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19,500
In-stock
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onsemi | MOSFET NFET U8FL 30V 44A 7.4MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 47 A | 7.4 mOhms | |||||||||||
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800
In-stock
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Vishay Semiconductors | MOSFET 100V 47A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 0.017 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 3.8 mOhms | 1.3 V to 2.3 V | 21 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS | |||||
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VIEW | IXYS | MOSFET 52 Amps 500V 0.08 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 47 A | 90 mOhms | Enhancement | HyperFET |
