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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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917
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 4.5 mOhms | PowerTrench | |||||||
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1,876
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | |||||
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884
In-stock
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Fairchild Semiconductor | MOSFET 60V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 12.8 mOhms | |||||||||
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4,102
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 3.4 mOhms | 1.3 V | 36 nC | Enhancement | |||||
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965
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 9 mOhms | 24 nC | Enhancement | Directfet | |||||
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1,413
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 4.2 mOhms | ||||||||||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement | Power MOS V | ||||||
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30
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | ||||||
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4,000
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet | |||||
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VIEW | IXYS | MOSFET 67 Amps 100V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 67 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 67 Amps 150V 0.028 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 67 A | 28 mOhms | Enhancement | HyperFET | ||||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement |