- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,397
In-stock
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onsemi | MOSFET NFET SO8FL 100V 104A 7.7M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 104 A | 6.5 mOhms | 2 V | 44 nC | Enhancement | ||||
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GET PRICE |
46,820
In-stock
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IR / Infineon | MOSFET MOSFT 150V 104A 11mOhm 77nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 5 V | 77 nC | ||||
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1,232
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 104 A | 8 mOhms | 86.7 nC | ||||||||
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29,180
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | |||
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131
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 104A 11mOhm 77nCAB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 77 nC | ||||||||
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777
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 104 A | 8 mOhms | 86.7 nC |
