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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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586
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 138 A | 15 mOhms | 4 V | 414 nC | ||||||
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20
In-stock
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IXYS | MOSFET 138 Amps 300V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 300 V | 138 A | 18 mOhms | 4.5 V | 258 nC | Enhancement | Polar, HiPerFET |