- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,873
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
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4,887
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 12 mOhms | 2 V | 42 nC | Enhancement | PowerTrench | |||
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346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
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4,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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2,998
In-stock
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Fairchild Semiconductor | MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin | +/- 16 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 25 V | 124 A | 1.4 mOhms | 1 V | 63 nC | Enhancement |
