- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 0.0063 Ohms (1)
- 0.149 Ohms (1)
- 125 mOhms (1)
- 13 mOhms (2)
- 140 mOhms (1)
- 145 mOhms (1)
- 148 mOhms (3)
- 15.5 mOhms (1)
- 160 mOhms (1)
- 170 mOhms (3)
- 18 mOhms (1)
- 190 mOhms (1)
- 240 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (1)
- 265 mOhms (1)
- 275 mOhms (1)
- 3.2 mOhms (1)
- 3.6 mOhms (2)
- 3.8 mOhms (1)
- 310 mOhms (1)
- 35 mOhms (1)
- 4.1 mOhms (1)
- 4.6 mOhms (2)
- 40 mOhms (1)
- 46 mOhms (1)
- 47 mOhms (1)
- 5 mOhms (1)
- 5.2 mOhms (1)
- 5.5 mOhms (2)
- 6.7 mOhms (1)
- 7 mOhms (1)
- 74 mOhms (1)
- 85 mOhms (1)
- 95 mOhms (4)
- Applied Filters :
46 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,478
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan SyncFET PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 3.6 mOhms | 1.9 V | 33 nC | PowerTrench SyncFET | ||||||
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2,907
In-stock
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Fairchild Semiconductor | MOSFET 30V 28A N-Channel PowerTrench | 16 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5 mOhms | Enhancement | PowerTrench | |||||
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4,133
In-stock
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onsemi | MOSFET NFET DPAK 100V 17A 106MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 19 A | 74 mOhms | 25 nC | Enhancement | |||||
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372
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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1,152
In-stock
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IR / Infineon | MOSFET MOSFT 250V 19A 46mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 19 A | 46 mOhms | 73 nC | Enhancement | |||||
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852
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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1,750
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 40 V | 19 A | 4.6 mOhms | 29 nC | Directfet | |||||||
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992
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | ||||
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2,907
In-stock
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Fairchild Semiconductor | MOSFET PT8 30V/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 19 A | 3.2 mOhms | 1.9 V | 33 nC | Enhancement | PowerTrench SyncFET | |||
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26,350
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 19 A | 3.6 mOhms | 1.5 V | 27 nC | PowerTrench SyncFET | |||||
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GET PRICE |
16,840
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
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1,900
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||||
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1,531
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | ||||||
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738
In-stock
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Fairchild Semiconductor | MOSFET UniFET, 400V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 19 A | 240 mOhms | Enhancement | UniFET | |||||
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718
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 265 mOhms | Enhancement | ||||||
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2,826
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 19 A | 4.6 mOhms | Enhancement | OptiMOS | |||||
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
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499
In-stock
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Fairchild Semiconductor | MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 19 A | 4.1 mOhms | Enhancement | PowerTrench | |||||
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3,925
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 15.5 mOhms | 11 nC | ||||||||
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1,205
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 19A 40mOhm 22.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 40 mOhms | 22.7 nC | ||||||||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | ||||
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1,262
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 47 mOhms | 1.2 V | 13 nC | Enhancement | ||||
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490
In-stock
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IR / Infineon | MOSFET MOSFT 30V 19A 4.5mOhm 29nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 29 nC | ||||||||
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110
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 190 mOhms | Enhancement | HyperFET | |||||
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337
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | ||||
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482
In-stock
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IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
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485
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 19 A | 0.149 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | ||||
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45
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 19 A | 310 mOhms | 2.5 V | 90 nC | Enhancement | |||||
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47
In-stock
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Toshiba | MOSFET N-Ch MOS 19A 450V 50W 2600pF 0.25 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 19 A | 250 mOhms |
