- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,340
In-stock
|
STMicroelectronics | MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 29 mOhms | 204 nC | Enhancement | |||||
|
|
601
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 24 mOhms | 4 V | 240 nC | Enhancement | MDmesh | |||
|
|
2,920
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 84 A | 4 mOhms | Enhancement | PowerTrench | |||||
|
|
11,660
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
785
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | ||||
|
|
1,732
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
|
|
4,074
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
|
|
10,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
|
|
2,402
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
3,975
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
|
|
536
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 84 A | 80 mOhms | CoolMOS | ||||||||
|
|
997
In-stock
|
Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
|
|
224
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | ||||||||
|
|
364
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 2 V to 4 V | 80 nC | Enhancement | ||||
|
|
181
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 84A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 3.2 mOhms | 124 nC | Enhancement | OptiMOS | ||||
|
|
20,300
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
700
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 80 nC | Enhancement | |||||
|
|
28
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 65 mOhms | 3 V | 340 nC | Enhancement | |||||
|
|
26
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 55 mOhms | 2.5 V | 340 nC | Enhancement | |||||
|
|
29
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | ||||||
|
|
145
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | ||||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
|
|
2,920
In-stock
|
Infineon Technologies | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | ||||
|
|
VIEW | IR / Infineon | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | ||||
|
|
756
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 6.8 mOhms | 4 V | 74.9 nC | Enhancement | ||||
|
|
14
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 2 V to 4 V | 58 nC | Enhancement |
