- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
5,600
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 48 mOhm typ., 33 A MDmesh DM6 Power MOS... | - 25 V, + 25 V | Tape & Reel (TR) | 240 W | N-Channel | 600 V | 58 A | 59 mOhms | 4.75 V | 72.5 nC | SMD | 1800 | Green available | ||||||||||
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27,001
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||||||
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4,800
In-stock
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Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | |||||||||
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3,854
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 9 mOhms | Enhancement | PowerTrench | |||||||||
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852
In-stock
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Fairchild Semiconductor | MOSFET 75V 58a 0.016 Ohms/VGS=10V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 58 A | 13 mOhms | Enhancement | PowerTrench | |||||||||
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1,355
In-stock
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Fairchild Semiconductor | MOSFET Discrete Auto N-Ch UltraFET Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 58 A | 13 mOhms | Enhancement | PowerTrench | |||||||||
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1,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||||||
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4,883
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement | ||||||||
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1,771
In-stock
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IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | |||||||
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1,031
In-stock
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onsemi | MOSFET NFET TO220 100V 72A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 18.2 mOhms | |||||||||||
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1,600
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||||||
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782
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||||||
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594
In-stock
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Vishay Semiconductors | MOSFET 40V 58A 48W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 0.005 Ohms | 1.5 V | 55 nC | Enhancement | TrenchFET | |||||||
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278
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||||||
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455
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||||||
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533
In-stock
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onsemi | MOSFET NFET SO8FL 60V 58A 13MOHM | SMD/SMT | DFN-5x6-8 | Reel | Si | N-Channel | 60 V | 58 A | 13 mOhms | |||||||||||||||
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1,951
In-stock
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IR / Infineon | MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 8.9 mOhms | 2.35 V | 10 nC | |||||||||||
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20
In-stock
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Microsemi | MOSFET Power MOSFET - Linear | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 58 A | 90 mOhms | 4 V | Enhancement | ||||||||||
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4
In-stock
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Microsemi | MOSFET Power MOSFET - Linear | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 58 A | 90 mOhms | 4 V | Enhancement | ||||||||||
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295
In-stock
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Toshiba | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 58 A | 4.4 mOhms | 2 V to 4 V | 46 nC | Enhancement | |||||||||
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780
In-stock
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onsemi | MOSFET NFET D2PAK 100V 59A 20MO | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 100 V | 58 A | 18.2 mOhms | |||||||||||||||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 0.037Ohm 58A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 58 A | 37 mOhms | 4 V | 143 nC | MDmesh | ||||||||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 58A 13mOhm Dual N-CH | SMD/SMT | DFN-5x6-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 58 A | 13 mOhms | ||||||||||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 10.5 mOhms | 22 nC | Enhancement | ||||||||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 58 Amps 200V 0.08W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 58 A | 45 mOhms | |||||||||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS | Through Hole | TO-3PF-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 58 A | 45 mOhms |
