- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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823
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 240 V | 160 mA | 16 Ohms | Enhancement | |||||
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5,720
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | Enhancement | |||||
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5,450
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 50Vdss 12Vgss 160mA | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 3.1 Ohms | 800 mV | - | Enhancement | |||
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3,968
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, NPN | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||
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955
In-stock
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Diodes Incorporated | MOSFET PNP/NMOS | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||
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9,000
In-stock
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Diodes Incorporated | MOSFET .2W 50V .16A | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 4 Ohms | Enhancement | |||||
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93,000
In-stock
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Diodes Incorporated | MOSFET PNP/NMOS | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 50 V | 160 mA | 5 Ohms |
