- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,956
In-stock
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Diodes Incorporated | MOSFET N-Chnl 250V | 40 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 240 mA | 9.5 Ohms | Enhancement | ||||||
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16,495
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 240 mA | 1.8 Ohms | 450 mV | Enhancement | |||||
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5,720
In-stock
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Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | ||||
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130,000
In-stock
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Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | PowerDI |
