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- 240 mOhms (3)
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- 28 mOhms (4)
- 280 mOhms (1)
- 299 mOhms (1)
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- 7.9 mOhms (1)
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49 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,054
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | ||||
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1,688
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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2,569
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 22 mOhms | Enhancement | PowerTrench | |||||
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2,927
In-stock
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Fairchild Semiconductor | MOSFET PowerStage 25V Dual N-Channel MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 34 A | 5 mOhms | Enhancement | PowerTrench | ||||||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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2,845
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 34 A | 2.7 mOhms | 61 nC | Enhancement | SyncFET | |||||
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2,023
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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GET PRICE |
4,992
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
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338
In-stock
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STMicroelectronics | MOSFET Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
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GET PRICE |
5,600
In-stock
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STMicroelectronics | MOSFET N-chanel 600 V 0.078 Ohm typ 34 A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||
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555
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | ||||
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1,930
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.1A ThinPAK-4 CoolMOS CP | VSON-4 | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 299 mOhms | CoolMOS | ||||||||||
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935
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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631
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
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821
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
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922
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | ||||
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707
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
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1,025
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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977
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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880
In-stock
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IXYS | MOSFET MOSFET 650V/34A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | ||||
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2,195
In-stock
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onsemi | MOSFET NFET SO8FL 40V 29A 10MOHM | SMD/SMT | DFN-5x6-8 | Reel | Si | N-Channel | 40 V | 34 A | 10 mOhms | |||||||||||
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937
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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770
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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233
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 78 mOhms | 2 V | 57 nC | Enhancement | |||||
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455
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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3,980
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 34 A | 8.5 mOhms | 9.3 nC | StrongIRFET | |||||||
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305
In-stock
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IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
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237
In-stock
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IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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50
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 500 V | 34 A | 180 mOhms | HyperFET |
