- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 0.024 Ohms (1)
- 0.0272 Ohms (1)
- 10.8 mOhms (1)
- 100 mOhms (1)
- 120 mOhms (1)
- 130 mOhms (4)
- 140 mOhms (2)
- 150 mOhms (4)
- 165 mOhms (2)
- 190 mOhms (1)
- 2.4 mOhms (1)
- 20 mOhms (1)
- 220 mOhms (2)
- 250 mOhms (1)
- 27 mOhms (2)
- 27.5 mOhms (2)
- 28 mOhms (1)
- 3.1 mOhms (1)
- 3.9 mOhms (1)
- 30 mOhms (1)
- 320 mOhms (2)
- 350 mOhms (1)
- 390 mOhms (1)
- 4.1 mOhms (1)
- 400 mOhms (1)
- 420 mOhms (2)
- 44 mOhms (1)
- 460 mOhms (1)
- 65 mOhms (2)
- 8 mOhms (1)
- 88 mOhms (1)
- 90 mOhms (2)
- Applied Filters :
48 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,000
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | ||||
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2,990
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.0272 Ohms | 1.5 V | 30 nC | Enhancement | ||||
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3,594
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 23 A | 2.4 mOhms | 1.7 V | 32 nC | PowerTrench SyncFET | ||||||
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702
In-stock
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Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
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3,275
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 15 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 65 mOhms | Enhancement | ||||||
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8,415
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27.5 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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738
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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618
In-stock
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STMicroelectronics | MOSFET N-chanel 600 V 0.120 Ohm typ 24 A | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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4,853
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27.5 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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989
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 23 A | 190 mOhms | Enhancement | UniFET | |||||
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307
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | |||
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800
In-stock
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Fairchild Semiconductor | MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 23 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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4,691
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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528
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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51,710
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 140 mOhms | Enhancement | CoolMOS | |||||
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3,593
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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1,223
In-stock
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Vishay Semiconductors | MOSFET 60V 23A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.024 Ohms | 1.5 V | 24 nC | Enhancement | TrenchFET | |||
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180
In-stock
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STMicroelectronics | MOSFET Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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316
In-stock
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Fairchild Semiconductor | MOSFET 40V/80A/2.8ohm/N-CH POWERTRENCH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 23 A | 3.1 mOhms | Enhancement | PowerTrench | |||||
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196
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | |||
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210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 220mOhm, max die of TO220F PKG | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
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523
In-stock
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onsemi | MOSFET 100V HD3E NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 44 mOhms | 2 V | 35 nC | |||||
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1,189
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 23 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 23 A | 28 mOhms | Enhancement | ||||||
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451
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 23A 90mOhm 37nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 23 A | 90 mOhms | 37 nC | ||||||||
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1,902
In-stock
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onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 23 A | 20 mOhms | 12.6 nC | ||||||
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255
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 23A 90mOhm 37nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 23 A | 90 mOhms | 5.5 V | 37 nC | Enhancement | ||||
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2,495
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 30 mOhms | 1.5 V | 20 nC | Enhancement | ||||
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194
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0 120 Ohm typ 24 A | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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18
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 350 mOhms | 195 nC | HyperFET | ||||||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220-3 | 3.5 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 140 mOhms | 48 nC | CoolMOS |
