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- Qg - Gate Charge :
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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,934
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | ||||
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3,032
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 82A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 82 A | 9 mOhms | 2.2 V | 27 nC | Enhancement | ||||
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8,950
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | ||||||||
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558
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | Enhancement | |||||
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GET PRICE |
8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | Enhancement | |||||
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1,456
In-stock
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onsemi | MOSFET NFET 60V 73A 8.2MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 82 A | 7.1 mOhms | |||||||||||
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25
In-stock
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IXYS | MOSFET 82 Amps 600V 0.75 Ohm Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 5 V | 240 nC | Enhancement | PolarHV, HiPerFET | |||
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8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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1,385
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
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490
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 4 V | 160 nC | Enhancement | ||||
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45
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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8
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A | 30 V | Screw Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 82 A | 49 mOhms | 255 nC | HyperFET | |||||||
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85
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | ||||||||
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50
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 82A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 82 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET 82 Amps 600V 0.78 Ohm Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 78 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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3,000
In-stock
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onsemi | MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 4.5 mOhms | ||||||||||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 275 nC | HyperFET |
