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17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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384
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 69 A | 24 mOhms | 4 V | 203 nC | Enhancement | MDmesh | ||||
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597
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 69 A | 41 mOhms | Enhancement | |||||||
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39,900
In-stock
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onsemi | MOSFET NFET SO8FL 30V 69A 4MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 69 A | 3.2 mOhms | 1.3 V | 26 nC | Enhancement | |||||
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31
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | ||||
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457
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | ||||
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294
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55 54 nC Qg, TO-220 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 55 V | 69 A | 11 mOhms | 54 nC | |||||||||||
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GET PRICE |
5,800
In-stock
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IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | Enhancement | ||||||
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42
In-stock
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IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT, HiPerFET | ||||
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1,490
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement | |||||
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556
In-stock
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STMicroelectronics | MOSFET N-channel 650 V 0.033ohm 69A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | Si | N-Channel | 650 V | 69 A | 30 mOhms | 4 V | 200 nC | |||||||
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1,500
In-stock
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onsemi | MOSFET NFET U8FL 30V 69A 7.5mOhm | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 69 A | 5.8 Ohms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | ||||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT | ||||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 69A CanPAK-2 SQ OptiMOS | WDSON-2-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 69 A | 3.5 mOhms | OptiMOS | |||||||||||
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VIEW | onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 69 A | 5.5 mOhms | |||||||||||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 69 A | 11.8 mOhms | Enhancement |