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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
27,800
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 87 A | 7.9 mOhms | 3 V | 40.7 nC | Enhancement | OptiMOS | |||
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2,566
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | ||||
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2,158
In-stock
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onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | |||||
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292
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | StrongIRFET | |||||
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688
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.3 mOhms | 3.7 V | 81 nC | StrongIRFET | |||||
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201
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC | |||||||||
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145
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 7.8 mOhms | 36 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 87 A | 7.8 mOhms | 17 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 87 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 87 A | 27 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement |