- Manufacture :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,134
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 3 V | 121 nC | Enhancement | |||||
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3,157
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 66 A | 8 mOhms | Enhancement | PowerTrench | |||||
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2,603
In-stock
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Fairchild Semiconductor | MOSFET PT8 30/12V Dual Nch Power Trench MOSFET | 12 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 66 A | 3.4 mOhms | - 4 mV/C | 25 nC | PowerTrench Power Clip | ||||
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544
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 4 V | 121 nC | Enhancement | |||||
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41
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 66 A | 65 mOhms | Enhancement | HyperFET | |||||
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51
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Chassis Mount | SOT-227-4 | Tube | Si | N-Channel | 600 V | 66 A | 70 mOhms | HyperFET | ||||||||||
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15
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 75 mOhms | 275 nC | HyperFET | |||||||
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23
In-stock
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IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
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50
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | |||
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1,490
In-stock
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onsemi | MOSFET NFET U8FL 25V 66A 4.8MOHM | 20 V | SMD/SMT | WDFN-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 66 A | 3.8 mOhms | 1.1 V | 12.4 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 0.037 Ohms | 3 V | 120 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 300V 0.046 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 66 A | 46 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V 0.04 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |
