- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,635
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement | ||||
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2,716
In-stock
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Diodes Incorporated | MOSFET 30/30V 3.1/2.3A N & P Channel | +/- 20 V, +/- 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 30 V | 3.1 A | 180 mOhms, 330 mOhms | Enhancement | ||||||
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8,073
In-stock
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Nexperia | MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.1 A | 46 mOhms | 1.3 V | 19 nC | Enhancement | ||||
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3,475
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 140 mOhms | 1 V | 5.4 nC | Enhancement | ||||
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2,955
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.1 A | 3.28 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | |||
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2,695
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 225 mOhms | Enhancement | ||||||
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2,278
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.1A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.1 A | 1.5 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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4,896
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | NexFET | ||||
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7,865
In-stock
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Texas instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | |||||
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GET PRICE |
1,394,500
In-stock
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onsemi | MOSFET NFET SOT23 20V 3.2A 80MO | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 20 V | 3.1 A | 80 mOhms | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 190 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 24.5 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 8 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 14.5 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 8 mOhms | Enhancement | ||||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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1,275
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 190 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 22 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 24.5 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 24.5 mOhms | Enhancement |
