- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,490
In-stock
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Fairchild Semiconductor | MOSFET 600V 2.4A N-Channel Q-FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.4 Ohms | 10.5 nC | Enhancement | QFET | ||||
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2,994
In-stock
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Fairchild Semiconductor | MOSFET MV5 150V/20V single n-channel powertrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.4 A | 333 mOhms | 2 V | 4.1 nC | Enhancement | PowerTrench | |||
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774
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.4 A | 6.3 Ohms | Enhancement | QFET | |||||
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872
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.4 A | 450 mOhms | Enhancement | ||||||
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902
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.4 A | 135 mOhms | 7.8 nC | Enhancement | |||||
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3,545
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.4 A | 100 mOhms | Enhancement | ||||||
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2,200
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 2.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 135 mOhms | 5.3 nC | Enhancement | |||||
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99
In-stock
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IXYS | MOSFET 2.4 Amps 1200V 7.5 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 2.4 A | 7.5 Ohms | Enhancement | ||||||
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3,355
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 4.68 Ohms | 2.5 V | 6 nC | Enhancement | CoolMOS | |||
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60
In-stock
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IXYS | MOSFET 2.4 Amps 500 V 3.5 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 3.75 Ohms | Enhancement | ||||||
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10
In-stock
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IXYS | MOSFET 2.4 Amps 500 V 3.5 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 3.75 Ohms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 2.4 Amps 1200V 7.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 2.4 A | 7.5 Ohms | Enhancement | ||||||
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1,428
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.6 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 2.4 Amps 1200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 2.4 A | 7.5 Ohms | Enhancement | ||||||
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995
In-stock
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Diodes Incorporated | MOSFET Dual 20V N Chl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 150 mOhms | Enhancement | ||||||
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46,200
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.6 Ohms | Enhancement | ||||||
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1,874
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.6 Ohms | Enhancement | ||||||
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12,500
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.6 Ohms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.4 A | 88 mOhms | Enhancement | ||||||
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1,351
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | ||||
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1,460
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 2.4A IPAK-3 | 20 V | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 2 Ohms | 3 V | 6 nC | CoolMOS | |||||
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81
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS |
