- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,324
In-stock
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Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | |||||
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3,478
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | |||||
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2,526
In-stock
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Diodes Incorporated | MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | 40 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 10 Ohms | - 500 mV | 2.8 nC | Enhancement | ||||
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1,096
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 620 mOhms | Enhancement | QFET | |||||
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4,361
In-stock
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Nexperia | MOSFET P-CH DMOS 250V 225MA | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 225 mA | 10 Ohms | Enhancement | ||||||
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1,261
In-stock
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Fairchild Semiconductor | MOSFET -250V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 550 mA | 4 Ohms | Enhancement | ||||||
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1,826
In-stock
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Diodes Incorporated | MOSFET P-Chnl 250V | 40 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 197 mA | 14 Ohms | Enhancement | ||||||
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411
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | ||||||
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438
In-stock
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Fairchild Semiconductor | MOSFET P-CH/250V/6A/0.62OHM, Y-formed lead | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 480 mOhms | - 5 V | 29 nC | Enhancement | QFET | |||
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347
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 10.5 A | 620 mOhms | Enhancement | QFET | |||||
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1,852
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 140 mA | 11 Ohms | - 1.5 V | - 3.6 nC | Enhancement | ||||
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1,328
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -430mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 430 mA | 3 Ohms | - 2 V | - 15.1 nC | Enhancement | ||||
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1,082
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||||
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2,342
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -190mA SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 7.7 Ohms | - 2 V | - 6.1 nC | Enhancement | ||||
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984
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -190mA SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 7.7 Ohms | - 2 V | - 6.1 nC | Enhancement | ||||
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1,424
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -430mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 430 mA | 3 Ohms | - 2 V | - 15.1 nC | Enhancement | ||||
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595
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 20 Ohms | - 2 V | - 0.2 nC | Enhancement | ||||
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9
In-stock
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Infineon Technologies | MOSFET P-Ch -250V 140mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | P-Channel | - 250 V | - 140 mA | 8 Ohms | - 2 V | - 4.8 nC | Enhancement |
