- Manufacture :
- Mounting Style :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,032
In-stock
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Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | Die | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET | |||||
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1,428
In-stock
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Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 1.5 A | 8 Ohms | Enhancement | ||||||
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2,073
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | PolarP | |||
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83
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||||
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937
In-stock
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STMicroelectronics | MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.8 A | 4 Ohms | 20 nC | Enhancement | |||||
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395
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
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80
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||||
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88
In-stock
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IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
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220
In-stock
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IXYS | MOSFET -11 Amps -500V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 0.122 V | 130 nC | Enhancement | ||||
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71
In-stock
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IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | Enhancement | |||||||
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114
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | ||||
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171
In-stock
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IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | - 5 V | 130 nC | Enhancement | ||||
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72
In-stock
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IXYS | MOSFET 11 Amps 500V 0.75 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 5 V | 130 nC | Enhancement | ||||
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31
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||||
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30
In-stock
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IXYS | MOSFET -22.0 Amps -500V 0.260 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 500 V | - 22 A | 260 mOhms | |||||||||||
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30
In-stock
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IXYS | MOSFET -13 Amps -500V 0.490 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 500 V | - 13 A | 490 mOhms | |||||||||||
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30
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
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30
In-stock
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IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | Enhancement | ||||||
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1,887
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 500V 2.1A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET |
