- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- - 0.27 A (2)
- - 1 A (2)
- - 1.6 A (1)
- - 10 A (1)
- - 108 A (1)
- - 11 A (2)
- - 11.5 A (1)
- - 110 A (1)
- - 120 A (2)
- - 13 A (6)
- - 13.2 A (1)
- - 14 A (4)
- - 140 A (2)
- - 140 mA (1)
- - 15 A (6)
- - 16.5 A (1)
- - 170 A (2)
- - 170 mA (1)
- - 18 A (3)
- - 195 A (1)
- - 2.3 A (1)
- - 2.4 A (1)
- - 21 A (1)
- - 210 A (2)
- - 22 A (2)
- - 23 A (6)
- - 230 mA (2)
- - 26 A (3)
- - 28 A (1)
- - 3.1 A (2)
- - 3.6 A (1)
- - 3.7 A (1)
- - 3.8 A (1)
- - 3.9 A (1)
- - 310 mA (1)
- - 33.5 A (2)
- - 36 A (2)
- - 360 mA (1)
- - 38 A (4)
- - 4 A (2)
- - 4.2 A (1)
- - 4.4 A (1)
- - 4.6 A (1)
- - 40 A (6)
- - 50 A (3)
- - 500 mA (1)
- - 52 A (4)
- - 57 A (1)
- - 6 A (1)
- - 6.5 A (3)
- - 6.6 A (4)
- - 6.8 A (1)
- - 680 mA (2)
- - 700 mA (2)
- - 75 mA (1)
- - 76 A (3)
- - 8 A (2)
- - 9 A (1)
- - 9.4 A (3)
- - 90 A (2)
- - 93 A (1)
- - 980 mA (1)
- Rds On - Drain-Source Resistance :
-
- 0.0081 Ohms (1)
- 0.0155 Ohms (1)
- 0.033 Ohms (2)
- 1 Ohms (1)
- 1.05 Ohms (2)
- 1.3 Ohms (1)
- 1.4 Ohms (2)
- 1.45 Ohms (2)
- 10 mOhms (2)
- 11 mOhms (1)
- 11.4 mOhms (1)
- 117 mOhms (7)
- 12 mOhms (2)
- 12.5 Ohms (1)
- 120 mOhms (3)
- 125 mOhms (3)
- 13 mOhms (1)
- 140 mOhms (2)
- 160 mOhms (2)
- 180 mOhms (1)
- 190 mOhms (3)
- 2.2 Ohms (1)
- 20 Ohms (2)
- 200 mOhms (5)
- 205 mOhms (8)
- 210 mOhms (2)
- 22 mOhms (1)
- 235 mOhms (1)
- 24 mOhms (1)
- 240 mOhms (2)
- 25 mOhms (4)
- 27 mOhms (1)
- 290 mOhms (4)
- 300 mOhms (2)
- 350 mOhms (1)
- 4.2 Ohms (2)
- 410 mOhms (1)
- 450 mOhms (2)
- 480 mOhms (5)
- 50 mOhms (4)
- 530 mOhms (4)
- 55 mOhms (2)
- 57 mOhms (1)
- 60 mOhms (10)
- 644 mOhms (2)
- 67 mOhms (1)
- 7.5 mOhms (2)
- 75 mOhms (2)
- 8 mOhms (1)
- 8 Ohms (3)
- 850 mOhms (1)
- 90 mOhms (3)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 6.4 nC (2)
- 1.1 nC (1)
- 1.8 nC (3)
- 10.7 nC (1)
- 12 nC (2)
- 12.4 nC (1)
- 120 nC (4)
- 125 nC (1)
- 134 nC (1)
- 140 nC (1)
- 144 nC (1)
- 150 nC (3)
- 16.5 nC (2)
- 17.5 nC (3)
- 18 nC (5)
- 180 nC (1)
- 190 nC (1)
- 197 nC (2)
- 21 nC (1)
- 240 nC (1)
- 26.9 nC (1)
- 3.7 nC (1)
- 350 nC (1)
- 37 nC (1)
- 38.7 nC (9)
- 39 nC (2)
- 400 nC (2)
- 42 nC (1)
- 47 nC (1)
- 48 nC (2)
- 5.3 nC (1)
- 52 nC (2)
- 58 nC (1)
- 60 nC (3)
- 62 nC (2)
- 64.7 nC (7)
- 740 nC (2)
- 900 pC (1)
- Tradename :
- Applied Filters :
123 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
16,362
In-stock
|
Diodes Incorporated | MOSFET P-Ch 100 Volt 5.2A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.8 A | 190 mOhms | - 4 V | 26.9 nC | Enhancement | ||||
|
|
7,752
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 140 mA | 20 Ohms | Enhancement | ||||||
|
|
42,620
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
|
3,703
In-stock
|
Diodes Incorporated | MOSFET 100V P-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.7 A | 190 mOhms | Enhancement | ||||||
|
|
3,588
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -100V -40A 60mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | ||||||||
|
|
1,228
In-stock
|
Fairchild Semiconductor | MOSFET -33.5A,-100V, P-ch | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | QFET | |||||
|
|
1,418
In-stock
|
IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
|
|
420
In-stock
|
IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | |||||||
|
|
6,934
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
2,874
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
|
|
1,147
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC | ||||||||||
|
|
867
In-stock
|
IXYS | MOSFET -90.0 Amps -100V 25 mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||
|
|
249
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
2,406
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | |||
|
|
2,545
In-stock
|
IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement | ||||||
|
|
333
In-stock
|
IXYS | MOSFET -90.0 Amps -100V 0.250 Rds | Through Hole | TO-268-3 | Tube | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||||||
|
|
2,470
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | ||||
|
|
4,363
In-stock
|
Fairchild Semiconductor | MOSFET -100V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1.05 Ohms | Enhancement | ||||||
|
|
3,524
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 75 mA | 20 Ohms | Enhancement | ||||||
|
|
3,960
In-stock
|
Diodes Incorporated | MOSFET 100V P-Chanl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1.6 A | 450 mOhms | Enhancement | ||||||
|
|
3,979
In-stock
|
Fairchild Semiconductor | MOSFET -100V Single | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 410 mOhms | Enhancement | ||||||
|
|
3,378
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.6 A | 1.05 Ohms | Enhancement | ||||||
|
|
3,238
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 530 mOhms | Enhancement | ||||||
|
|
GET PRICE |
29,880
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | - 4 V | 38.7 nC | Enhancement | |||
|
|
2,258
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | |||||
|
|
GET PRICE |
14,020
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||
|
|
1,158
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13.2 A | 125 mOhms | Enhancement | QFET | |||||
|
|
254
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V/25V Pch Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.4 A | 67 mOhms | PowerTrench | |||||||
|
|
800
In-stock
|
Fairchild Semiconductor | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | QFET | |||||
|
|
4,369
In-stock
|
Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement |
