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73 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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981
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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479
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||||
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615
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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421
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
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314
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 7 A | 1.9 Ohms | 3 V to 5 V | 47 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | |||
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816
In-stock
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IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | |||
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329
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 12 A | 690 mOhms | 3 V to 5 V | 44.2 nC | Enhancement | |||||
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42
In-stock
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IXYS | MOSFET 32 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 32 A | 310 mOhms | 6.5 V | 360 nC | Enhancement | Polar, HiPerFET | |||
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150
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | Enhancement | HyperFET | |||||
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90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | |||
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600
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | |||
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75
In-stock
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IXYS | MOSFET 26 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | |||
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57
In-stock
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IXYS | MOSFET 26 Amps 1200V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 20 A | 570 mOhms | Enhancement | HyperFET | |||||
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320
In-stock
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | ||||||
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138
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | Enhancement | HyperFET | |||||
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92
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||||
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70
In-stock
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IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.6 Ohms | 5 V | 56 nC | Enhancement | ||||
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41
In-stock
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IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | Enhancement | ||||||
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95
In-stock
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IXYS | MOSFET 1500V High Voltage Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
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32
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
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9
In-stock
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IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | 5 V | 270 nC | Enhancement | ||||
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99
In-stock
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IXYS | MOSFET 2.4 Amps 1200V 7.5 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 2.4 A | 7.5 Ohms | Enhancement | ||||||
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441
In-stock
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IXYS | MOSFET 0.8 Amps 1200V 25 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 800 mA | 20.5 Ohms | 4.5 V | 14 nC | Enhancement | Polar | |||
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30
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 9 A | 1.04 Ohms | Enhancement | HyperFET | |||||
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28
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 15 A | 500 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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9
In-stock
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IXYS | MOSFET 17 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 15 A | 900 mOhms | 6 V | 155 nC | Enhancement | Linear | |||
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30
In-stock
|
IXYS | MOSFET 26 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 13 A | 630 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 26 Amps 1200V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 23 A | 460 mOhms | Enhancement | HyperFET |
