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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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8,622
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 500 | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | 34.7W (Tc) | ||
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8,625
In-stock
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | 0 | 5000 | N-Channel | - | 650V | 4.2A (Tc) | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | 328pF @ 100V | 10V | ±20V | 34.7W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 22.4A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 1mA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | 34.7W (Tc) | |||
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1,995
In-stock
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Infineon Technologies | MOSFET COOLMOS 700V TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 700V | 6.5A (Tc) | 750 mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 400V | 306pF @ 400V | 10V | ±16V | 34.7W (Tc) |
