- Package / Case :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 105A SUPER247 | TO-274AA | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | SUPER-247 (TO-274AA) | 0 | 7000 | N-Channel | - | 150V | 105A (Tc) | 15 mOhm @ 63A, 10V | 5V @ 250µA | 390nC @ 10V | 6810pF @ 25V | 10V | ±30V | 441W (Tc) | |||
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408
In-stock
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Infineon Technologies | MOSFET NCH 135V 129A TO220 | TO-220-3 | StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 135V | 129A (Tc) | 8.4 mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | 10V | ±20V | 441W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 800 | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | 441W (Tc) |
