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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 115A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 3000 N-Channel 60V 115A (Tc) 9 mOhm @ 54A, 10V 4V @ 250µA 170nC @ 10V 4080pF @ 25V 10V ±20V 270W (Tc)
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Infineon Technologies MOSFET N-CH 60V 115A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel 60V 115A (Tc) 9 mOhm @ 54A, 10V 4V @ 250µA 170nC @ 10V 4080pF @ 25V 10V ±20V 270W (Tc)
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Infineon Technologies MOSFET N-CH 30V 179A SUPER-220 Super-220™-3 (Straight Leads) HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete SUPER-220™ (TO-273AA) 0 50 N-Channel 30V 179A (Tc) 5 mOhm @ 71A, 10V 1V @ 250µA 140nC @ 4.5V 5000pF @ 25V - - 270W (Tc)
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$32.150
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STMicroelectronics MOSFET N-CH 1200V 45A HIP247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V 270W (Tc)
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