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- Current - Continuous Drain (Id) @ 25°C :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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GET PRICE |
9,000
In-stock
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Toshiba | MOSFET P-CH 20V 4A UFM | 3-SMD, Flat Leads | U-MOSIV | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | UFM | 0 | 0 | 3000 | P-Channel | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V | 500mW (Ta) | ||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 440MA 3-DFN | 3-UFDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 150°C (TJ) | Active | 3-DFN1006 (1.0x0.6) | 396000 | 0 | 3000 | N-Channel | 20V | 440mA (Ta) | 1.5 Ohm @ 10mA, 4V | 1.2V @ 100µA | - | - | 1.5V, 4V | ±10V | 450mW (Ta) | |||
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186,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 200MA 3-DFN | 3-XFDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -65°C ~ 150°C (TJ) | Active | X2-DFN1006-3 | 405000 | 0 | 3000 | N-Channel | 20V | 200mA (Ta) | 1.5 Ohm @ 10mA, 4V | 900mV @ 100µA | - | 41pF @ 3V | 1.5V, 4V | ±10V | 400mW (Ta) |
