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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$9.190
VIEW
RFQ
STMicroelectronics MOSFET N-CH 600V 52A TO247-4 TO-247-4 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-4L 0 1 N-Channel - 600V 52A (Tc) 55 mOhm @ 26A, 10V 4V @ 250µA 91nC @ 10V 3750pF @ 100V 10V ±25V 350W (Tc)
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Per Unit
$8.170
VIEW
RFQ
STMicroelectronics MOSFET N-CH 600V 52A TO247 TO-247-3 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 52A (Tc) 55 mOhm @ 26A, 10V 4V @ 250µA 91nC @ 10V 3750pF @ 100V 10V ±25V 350W (Tc)
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Per Unit
$10.430
RFQ
1,083
In-stock
STMicroelectronics MOSFET N-CH 650V 27A TO-247 TO-247-3 MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 10V ±25V 160W (Tc)
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Per Unit
$8.640
RFQ
501
In-stock
STMicroelectronics MOSFET N-CH 650V 27A TO-220FP TO-220-3 Full Pack MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP 0 1 N-Channel - 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 10V ±25V 40W (Tc)
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