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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 75V 142A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 150 N-Channel - 75V 142A (Tc) 7.5 mOhm @ 85A, 10V 4V @ 250µA 320nC @ 10V 7750pF @ 25V 10V ±20V 380W (Tc)
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Per Unit
$1.631
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RFQ
Infineon Technologies MOSFET N-CH TO263-7 TO-263-7, D²Pak (6 Leads + Tab) Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7-3 0 1000 N-Channel - 80V 160A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 150µA 112nC @ 10V 7750pF @ 25V 10V ±20V 208W (Tc)
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Per Unit
$3.230
RFQ
6,259
In-stock
Infineon Technologies MOSFET N-CH 75V 142A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 75V 142A (Tc) 7.5 mOhm @ 85A, 10V 4V @ 250µA 320nC @ 10V 7750pF @ 25V 10V ±20V 380W (Tc)
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