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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
STP7NM50N
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RFQ
128,620
In-stock
STMicroelectronics MOSFET N-CH 500V 5A TO-220 TO-220-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 1000 N-Channel - 500V 5A (Tc) 780 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 400pF @ 50V 10V ±25V 45W (Tc)
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Per Unit
$0.400
RFQ
6,000
In-stock
onsemi MOSFET N-CH 100V 4.8A 8-PQFN 8-PowerTDFN PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 3000 N-Channel - 100V 4.8A (Ta), 16.5A (Tc) 56 mOhm @ 4.8A, 10V 4V @ 250µA 7nC @ 10V 400pF @ 50V 6V, 10V ±20V 2.5W (Ta), 31W (Tc)
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