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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.160
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RFQ
STMicroelectronics N-CHANNEL 60 V, 0.0028 OHM TYP., TO-263-7, D²Pak (6 Leads + Tab) STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 175°C (TJ) Active H2PAK-6 0 1000 N-Channel - 60V 80A (Tc) 3.2 mOhm @ 40A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V 158W (Tc)
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Per Unit
$1.980
RFQ
255
In-stock
STMicroelectronics MOSFET N-CH 30V 80A TO220 TO-220-3 DeepGATE™, STripFET™ VI Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Active TO-220 0 1 N-Channel - 30V 80A (Tc) 3.5 mOhm @ 40A, 10V 2.5V @ 250µA 42nC @ 4.5V 3100pF @ 25V 4.5V, 10V ±20V 140W (Tc)
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Per Unit
$2.110
RFQ
1,004
In-stock
STMicroelectronics N-CHANNEL 60 V, 0.0031 OHM TYP., TO-220-3 Full Pack STripFET™ Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Active TO-220FP 0 1 N-Channel - 60V 70A (Tc) 3.5 mOhm @ 35A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V 33W (Tc)
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