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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 100V 18A TO-220AB TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 500 N-Channel - 100V 18A (Tc) 72.5 mOhm @ 13A, 10V 5V @ 250µA 23nC @ 10V 550pF @ 50V 10V ±20V 60W (Tc)
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Per Unit
$1.880
RFQ
1,414
In-stock
STMicroelectronics MOSFET N CH 620V 3.8A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 620V 3.8A (Tc) 2 Ohm @ 1.9A, 10V 4.5V @ 50µA 22nC @ 10V 550pF @ 50V 10V ±30V 25W (Tc)
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