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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO263-3-2 0 1 N-Channel - 60V 80A (Tc) 8.2 mOhm @ 80A, 10V 2V @ 125µA 104nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V 188W (Tc)
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Infineon Technologies MOSFET N-CH 60V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 60V 80A (Tc) 8 mOhm @ 80A, 10V 4V @ 150µA 93nC @ 10V 3500pF @ 30V 10V ±20V 214W (Tc)
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Infineon Technologies MOSFET N-CH 60V 80A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO263-3-2 0 1000 N-Channel - 60V 80A (Tc) 7.7 mOhm @ 80A, 10V 4V @ 150µA 93nC @ 10V 3500pF @ 30V 10V ±20V 214W (Tc)
100N06LS
5+
$1.000
50+
$0.800
RFQ
8,925
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 8-PowerVDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel - 60V 11A (Ta), 20A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 23µA 45nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V 2.1W (Ta), 50W (Tc)
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