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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 0 | 1000 | N-Channel | - | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | PG-SOT223-4 | 0 | 0 | 1000 | N-Channel | - | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | 1.8W (Ta) | ||||
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GET PRICE |
7,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 0 | 2320 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 0 | 2500 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 0 | 1000 | N-Channel | - | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | TO-261-4, TO-261AA | Automotive, AEC-Q101, HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 0 | 2500 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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5,000
In-stock
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onsemi | MOSFET N-CH 200V 4.5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | UniFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 15000 | 0 | 2500 | N-Channel | - | 200V | 4.5A (Tc) | 800 mOhm @ 2.3A, 10V | 5V @ 250µA | 6.1nC @ 10V | 230pF @ 25V | 10V | ±30V | 40W (Tc) |
