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- FET Type :
- Power - Max :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 7A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-DSO-8 | 0 | 2500 | N-Channel | - | 30V | 7A (Ta) | 22 mOhm @ 8.6A, 10V | 2.1V @ 250µA | 10.4nC @ 10V | 800pF @ 15V | 4.5V, 10V | ±20V | 1.56W (Ta) | ||||
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VIEW | onsemi | MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench®, SyncFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 30V | 6.9A, 8.2A | 21 mOhm @ 6.9A, 10V | 3V @ 250µA | 12nC @ 5V | 800pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 6A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-DSO-8 | 0 | 2500 | 2 N-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 6A | 22 mOhm @ 7.7A, 10V | 2.1V @ 250µA | 10nC @ 10V | 800pF @ 15V | |||||||
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VIEW | Infineon Technologies | DIFFERENTIATED MOSFETS | 8-PowerVDFN | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-WISON-8 | 0 | 5000 | 2 N-Channel (Dual) | 1.9W (Ta), 31W (Tc) | Logic Level Gate, 4.5V Drive | 30V | 9.5A (Ta), 25A (Tc) | 9.5 mOhm @ 9A, 10V | 2V @ 250µA | 5.6nC @ 4.5V | 800pF @ 15V |
