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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 4.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | 8-SO | 0 | 4000 | P-Channel | - | 20V | 4.3A (Ta) | 100 mOhm @ 2A, 10V | - | 40nC @ 10V | 750pF @ 20V | ||||
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VIEW | onsemi | MOSFET 2N-CH 60V 4.5A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | - | 150°C (TJ) | Active | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 1.8W | Logic Level Gate, 4V Drive | 60V | 4.5A | 58 mOhm @ 4.5A, 10V | 2.6V @ 1mA | 14nC @ 10V | 750pF @ 20V |
