- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- FET Type :
- Power - Max :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 100 mOhm @ 6A, 10V (1)
- 107 mOhm @ 8A, 5V (2)
- 115 mOhm @ 5.5A, 10V (1)
- 175 mOhm @ 5.4A, 10V (1)
- 175 mOhm @ 6.6A, 10V (8)
- 175 mOhm @ 7.2A, 10V (7)
- 28 mOhm @ 5A, 10V (3)
- 330 mOhm @ 3A, 10V (4)
- 480 mOhm @ 3.9A, 10V (3)
- 480 mOhm @ 4A, 10V (7)
- 500 mOhm @ 3A, 10V (1)
- 6.5 Ohm @ 780mA, 10V (1)
- 800 mOhm @ 2.5A, 10V (1)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 700 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 700 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 9.5A TO-220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | TO-220AB Full-Pak | 0 | 50 | P-Channel | - | 55V | 9.5A (Tc) | 175 mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 29W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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46,520
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 600 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 400 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | ||||
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18,642
In-stock
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STMicroelectronics | MOSFET N-CH 200V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | MESH OVERLAY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | DPAK | 0 | 2500 | N-Channel | - | 200V | 5A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 12A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 12A (Tc) | 100 mOhm @ 6A, 10V | 2V @ 250µA | 10nC @ 5V | 350pF @ 25V | 5V, 10V | ±16V | 42.8W (Tc) | ||||
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121
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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56,000
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | ||||
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1,874
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | 850mW (Ta) | ||||
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2,453
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | 850mW (Ta) | ||||
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4,942
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 0.9A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 100V | 900mA (Ta) | 500 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | 850mW (Ta) | ||||
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1,004
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Active | TO-220AB | 0 | 1 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | - | - | - | ||||
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50,440
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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7,896
In-stock
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onsemi | MOSFET N-CH 60V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-251AA | 46800 | 1 | N-Channel | - | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | 38W (Tc) |
