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- Current - Continuous Drain (Id) @ 25°C :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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Infineon Technologies | MOSFET N-CH 650V 39A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 39A (Tc) | 75 mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116nC @ 10V | 4000pF @ 100V | 10V | ±20V | 313W (Tc) | |||
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2,419
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Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 97A (Tc) | 8.6 mOhm @ 58A, 10V | 4V @ 150µA | 116nC @ 10V | 4476pF @ 50V | 10V | ±20V | 221W (Tc) |
