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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 90A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 120A TO220-3-1 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 40V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | 158W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 80A (Tc) | 7.9 mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | 5V, 10V | ±16V | 105W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 315A DIRECTFET | DirectFET™ Isometric L6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET L6 | 0 | 4000 | N-Channel | - | 40V | 31A (Ta), 156A (Tc) | 1.9 mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | 5469pF @ 25V | 10V | ±20V | 3.3W (Ta), 83W (Tc) | |||
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6,200
In-stock
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STMicroelectronics | MOSFET N-CH 650V 45A TO-247 | TO-247-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 650V | 45A (Tc) | 110 mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | 10V | ±30V | 417W (Tc) | |||
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450
In-stock
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Infineon Technologies | MOSFET N CH 40V 90A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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56,000
In-stock
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Infineon Technologies | MOSFET N CH 40V 90A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 2000 | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | 158W (Tc) |
