- Series :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | TO-263 (D²Pak) | 0 | 450 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 47A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | 175W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 71A TO220 | TO-220-3 Full Pack | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 | 0 | 2000 | N-Channel | - | 60V | 71A (Tc) | 4.2 mOhm @ 43A, 10V | 4V @ 150µA | 135nC @ 10V | 4685pF @ 50V | 10V | ±20V | 46W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 47A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | 175W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A TO220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D²Pak) | 0 | 800 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) |
