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22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | PG-TO220-3-1 | 0 | 0 | N-Channel | - | 55V | 100A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 40V | 100A (Tc) | 3.3 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 6000pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | PG-TO263-3-2 | 0 | 0 | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | 380W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 120A D2PAK7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK (7-Lead) | 0 | 200 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 135A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 350 | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Last Time Buy | TO-220AB | 0 | 1000 | N-Channel | - | 55V | 75A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 330W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 120A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 500 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 120A | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 800 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 100A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | |||
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1,100
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | |||
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2,177
In-stock
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Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 75A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 330W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | 380W (Tc) | |||
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1,600
In-stock
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Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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6,400
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) |
