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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 0 | 800 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 0 | 1 | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 0 | 350 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 0 | 550 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 0 | 800 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 0 | 50 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 0 | 50 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 0 | 250 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 180W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 0 | 800 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | |||
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1,652
In-stock
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Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 0 | 1 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 180W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | 2.5W (Ta) | |||
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5,000
In-stock
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onsemi | MOSFET P-CH 20V 11A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 47500 | 0 | 2500 | P-Channel | - | 20V | 11A (Ta) | 14 mOhm @ 11A, 4.5V | 1.5V @ 250µA | 60nC @ 4.5V | 4044pF @ 10V | 2.5V, 4.5V | ±12V | 2.5W (Ta) |
