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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 11A (Ta) 11.9 mOhm @ 11A, 10V 2.35V @ 25µA 9.3nC @ 4.5V 760pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel   - 30V 11A (Ta) 11.9 mOhm @ 11A, 10V 2.35V @ 25µA 9.3nC @ 4.5V 760pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$0.402
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onsemi MOSFET 2N-CH 30V SO8FL 8-PowerTDFN - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 0 5000 2 N-Channel (Dual) 1.09W, 1.15W Standard 30V 9.1A, 13.7A 7.3 mOhm @ 10A, 10V 2.1V @ 250µA 9.3nC @ 4.5V 970pF @ 15V      
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Per Unit
$0.452
RFQ
1,500
In-stock
onsemi MOSFET 2N-CH 30V SO8FL 8-PowerTDFN - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 0 1500 2 N-Channel (Dual) 1.09W, 1.15W Standard 30V 9.1A, 13.7A 7.3 mOhm @ 10A, 10V 2.1V @ 250µA 9.3nC @ 4.5V 970pF @ 15V      
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