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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 13.6A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 13.6A (Ta) | 12.5 mOhm @ 10A, 4.5V | 1V @ 250µA | 14nC @ 5V | 1010pF @ 15V | 4.5V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 35A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 14.6A (Ta), 35A (Tc) | 9.4 mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | 1800pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 52W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 35A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 25V | 14A (Ta), 35A (Tc) | 8.5 mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | 1800pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 52W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1680 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 13.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1140 | N-Channel | - | 30V | 13.6A (Ta) | 12.5 mOhm @ 10A, 4.5V | 1V @ 250µA | 14nC @ 5V | 1010pF @ 15V | 4.5V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2500 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 40A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ III | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | DPAK | 0 | 2500 | N-Channel | - | 30V | 40A (Tc) | 10.5 mOhm @ 20A, 10V | 1V @ 250µA | 14nC @ 5V | 1434pF @ 25V | 5V, 10V | ±20V | 60W (Tc) | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | 2.5W (Ta) | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | ||||
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5,000
In-stock
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onsemi | MOSFET 2N-CH 30V 7.5A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench®, SyncFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 30V | 7.5A | 22 mOhm @ 7.5A, 10V | 3V @ 1mA | 14nC @ 5V | 550pF @ 15V |
