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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.220
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RFQ
Infineon Technologies MOSFET N-CH 100V 45A TO220-3 TO-220-3 Full Pack OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-FP 0 1 N-Channel - 100V 44A (Tc) 8.3 mOhm @ 44A, 10V 3.8V @ 49µA 37nC @ 10V 2730pF @ 50V 6V, 10V ±20V 36W (Tc)
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Per Unit
$0.888
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RFQ
Infineon Technologies MOSFET N-CH 80V 95A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 80V 95A (Tc) 5.2 mOhm @ 47.5A, 10V 3.8V @ 49µA 40nC @ 10V 2900pF @ 40V 6V, 10V ±20V 2.5W (Ta), 83W (Tc)
IPP083N10N5
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RFQ
42,700
In-stock
Infineon Technologies MOSFET N-CH TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 100V 73A (Tc) 8.3 mOhm @ 73A, 10V 3.8V @ 49µA 37nC @ 10V 2730pF @ 50V 6V, 10V ±20V 100W (Tc)
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