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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.118
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RFQ
Infineon Technologies MOSFET N-CH 650V TO-220-3 TO-220-3 Automotive, AEC-Q101, CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V 195.3W (Tc)
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Per Unit
$2.630
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Infineon Technologies MOSFET N-CH TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active D²PAK (TO-263AB) 0 1000 N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V 195.3W (Tc)
65F6150A
5+
$5.000
50+
$4.700
RFQ
1,623
In-stock
Infineon Technologies MOSFET N-CH 650V TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V 195.3W (Tc)
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Per Unit
$4.080
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RFQ
Infineon Technologies MOSFET N-CH 650V 22.4A TO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V 195.3W (Tc)
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Per Unit
$2.039
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RFQ
Infineon Technologies MOSFET N-CH 650V 22.4A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D²PAK (TO-263AB) 0 1000 N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V 195.3W (Tc)
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Per Unit
$11.320
RFQ
195
In-stock
Infineon Technologies HIGH POWER_NEW TO-247-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 38A (Tc) 55 mOhm @ 18A, 10V 4.5V @ 900µA 79nC @ 10V 3194pF @ 400V 10V ±20V 178W (Tc)
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